IXTP64N055T【PDF 2/5 页】MOSFET N-CH 55V 64A TO-220

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IXTP64N055T

IXTY64N055T

Symbol Test Conditions

(T J = 25 ° C unless otherwise specified)

Characteristic Values

Min. Typ. Max.

TO-220 (IXTP) Outline

g fs

C iss

C oss

C rss

t d(on)

t r

t d(off)

V DS = 10 V; I D = 0.5 I D25 , Note 1

V GS = 0 V, V DS = 25 V, f = 1 MHz

V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A

R G = 18 Ω (External)

1420

255

t f

Q g(on)

Q gs

V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A

Pins:

1 - Gate

3 - Source

2 - Drain

4, TAB - Drain

Q gd

R thJC

1.15 ° C/W

R thCS

TO-220

0.5

° C/W

Source-Drain Diode

Symbol Test Conditions

Characteristic

Values

(T J = 25 ° C unless otherwise specified)

Min.

Typ.

Max.

I S

V GS = 0 V

I SM

Repetitive

170

Notes:

V SD

t rr

I F =25 A, V GS = 0 V, Note 1

I F = 25 A, -di/dt = 100 A/ μ s

1.2

1. Pulse test: t ≤ 300 μ s, duty cycle

d ≤ 2 %;

2. On through-hole packages, R DS(on)

V R = 30 V, V GS = 0 V

TO-252 (IXTY) Outline

Kelvin test contact location must be

5 mm or less from the package body.

Dim.

Millimeter

Inches

Min. Max.

PRELIMINARYTECHNICAL

2.19 2.38

0.89 1.14

0 0.13

0.64 0.89

0.086

0.035

0.025

0.094

0.045

0.005

0.035

INFORMATION

1 Anode

2 NC

3 Anode

4 Cathode

0.76 1.14

5.21 5.46

0.46 0.58

5.97 6.22

4.32 5.21

6.35 6.73

4.32 5.21

2.28 BSC

4.57 BSC

9.40 10.42

0.51 1.02

0.64 1.02

0.89 1.27

2.54 2.92

0.030

0.205

0.018

0.235

0.170

0.250

0.170

0.090

0.180

0.370

0.020

0.025

0.035

0.100

0.045

0.215

0.023

0.245

0.205

0.265

0.205

BSC

0.410

0.040

0.050

0.115

The product presented herein is under

development. The Technical Specifica-

tions offered are derived from data

gathered during objective characteriza-

tions of preliminary engineering lots; but

also may yet contain some information

supplied during a pre-production design

evaluation. IXYS reserves the right to

change limits, test conditions, and

dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

one or moreof the following U.S. patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

6,683,344

6,710,405B2

6,710,463

6,727,585

6,759,692

6771478 B2

7,005,734 B2

7,063,975 B2

7,071,537

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